An Experimentally Verified Active Gate Control Method for the Series Connection of IGBT/Diodes
作者： Igor Baraia , Jon Andoni Barrena , Gonzalo Abad , José María Canales Segade , Unai Iraola
DOI: 10.1109/TPEL.2011.2161336
关键词:
摘要: The series connection of insulated gate bipolar transistor (IGBT)/diode devices allows the operation at voltage levels higher than rated one IGBT/diode. However, due to individual parameter differences series-connected IGBT/diodes, it is difficult ensure a proper balance between them, and transient or steady-state unbalances could cause failure these devices. This paper presents an active driver developed by authors that suitable for IGBTs. proposed achieves IGBT/diode effectiveness control method has been experimentally validated, promising results have obtained.
harvard.edu
sci-hub.se 参考文章(35)
M. Cotorogea, Physics-Based SPICE-Model for IGBTs With Transparent Emitter IEEE Transactions on Power Electronics. ,vol. 24, pp. 2821- 2832 ,(2009) , 10.1109/TPEL.2009.2030328
C. Gerster, Fast high-power/high-voltage switch using series-connected IGBTs with active gate-controlled voltage-balancing applied power electronics conference. pp. 469- 472 ,(1994) , 10.1109/APEC.1994.316362
Tommy Kjellqvist, Stefan Ostlund, Staffan Norrga, Active snubber circuit for source commutated converters utilizing the IGBT in the linear region european conference on power electronics and applications. ,vol. 23, pp. 2595- 2601 ,(2007) , 10.1109/TPEL.2008.2002093
R Roesner, J Holtz, R Kennel, None, Cellular driver/snubber scheme for series connection of IGCTs power electronics specialists conference. ,vol. 2, pp. 637- 641 ,(2001) , 10.1109/PESC.2001.954188
C. Gerster, P. Hofer, N. Karrer, Gate-control strategies for snubberless operation of series connected IGBTs power electronics specialists conference. ,vol. 2, pp. 1739- 1742 ,(1996) , 10.1109/PESC.1996.548815
Y. Jiang-Häfner, M. Jeroense A. Gustafsson, B. Jacobson, M. Bergkvist, P. Rey G. Asplund, HVDC WITH VOLTAGE SOURCE CONVERTERS AND EXTRUDED CABLES FOR UP TO ±300 kV AND 1000 MW ,(2006)
Waldemar A. Belwon, An apparatus for controlling voltage-charge controlled power semiconductor devices ,(1999)
Ulrich Schwarzer, R. Sommer, G. Zaiser, Rik W. de Doncker, Snubberless operation of series connected 6.5 kV IGBTs for high-power and high-voltage applications EPE Association. ,(2003)
J.A. Barrena, S. Aurtenechea, J.M. Canales, M.A. Rodriguez, L. Marroyo, Design, analysis and comparison of multilevel topologies for DSTATCOM applications european conference on power electronics and applications. ,(2005) , 10.1109/EPE.2005.219593
A. Benchaib, E. Lee-Kwet-Sun, J-L. Thierry, G. de Preville, Industrial D-STATCOM chain link modelling and control european conference on power electronics and applications. pp. 1- 9 ,(2007) , 10.1109/EPE.2007.4417331