3-D electrothermal simulation of active cycling on smart power MOSFETs during short-circuit and UIS conditions

摘要: Abstract Active cycling of power devices operated in harsh conditions causes high dissipation, resulting critical electrothermal and thermo-mechanical effects that may lead to catastrophic failures. This paper analyzes the ageing-induced degradation chip metallization a MOSFET its impact on device robustness during short-circuit unclamped inductive switching tests. A 3-D simulator relying full circuit representation whole is used predict influence various ageing levels. It found can jeopardize transistor when subject due exacerbated de-biasing effect gate-source voltage distribution; conversely, this mechanism does not arise under conditions. allows explaining difference time-to-failure experimentally observed for transistors these tests dissipating same energy.