Compact electro-thermal modeling and simulation of large area multicellular Trench-IGBT
作者： M. Riccio , M. Carli , L. Rossi , A. Irace , G. Breglio
DOI: 10.1109/MIEL.2010.5490459
关键词:
摘要: In this contribution we report on electro-thermal modeling and simulation strategy of large area multicellular Trench-IGBT (TIGBT). The proposed solution is based two coupled systems: a 3D thermal simulator 1D electrical (with temperature dependent parameters) physical model single TIGBT cell. cell has been calibrated to fit the experimental characteristics 1200Volt-1000Ampere commercial influence breakdown behaviour second order effects also included. unit inserted in time maps have obtained. As final results will present simulations short-circuit condition; latch-up onset parasitic thyristor be analyzed.
sci-hub.se 参考文章(11)
B. Fatemizadeh, D. Silber, M. Fullmann, J. Serafin, Modeling of LDMOS and LIGBT structures at high temperatures international symposium on power semiconductor devices and ic's. pp. 137- 142 ,(1994) , 10.1109/ISPSD.1994.583676
N. Rinaldi, V. d'Alessandro, Theory of electrothermal behavior of bipolar transistors: part III-impact ionization IEEE Transactions on Electron Devices. ,vol. 53, pp. 1683- 1697 ,(2006) , 10.1109/TED.2006.876285
Andrea Irace, Giovanni Breglio, Paolo Spirito, New developments of THERMOS3, a tool for 3D electro-thermal simulation of smart power MOSFETs Microelectronics Reliability. ,vol. 47, pp. 1696- 1700 ,(2007) , 10.1016/J.MICROREL.2007.07.012
F. Udrea, G.A.J. Amaratunga, Theoretical and numerical comparison between DMOS and trench technologies for insulated gate bipolar transistors IEEE Transactions on Electron Devices. ,vol. 42, pp. 1356- 1366 ,(1995) , 10.1109/16.391221
A.R. Hefner, An investigation of the drive circuit requirements for the power insulated gate bipolar transistor (IGBT) power electronics specialists conference. ,vol. 6, pp. 208- 219 ,(1990) , 10.1109/63.76807
A.R. Hefner, D.L. Blackburn, Thermal component models for electro-thermal network simulations semiconductor thermal measurement and management symposium. ,vol. 17, pp. 413- 424 ,(1993) , 10.1109/95.311751
A.R. Hefner, Analytical modeling of device-circuit interactions for the power insulated gate bipolar transistor (IGBT) ieee industry applications society annual meeting. ,vol. 26, pp. 995- 1005 ,(1988) , 10.1109/28.62382
V. Axelrad, R. Klein, Electrothermal simulation of an IGBT international symposium on power semiconductor devices and ic's. pp. 158- 159 ,(1992) , 10.1109/ISPSD.1992.991254
A.R. Hefner, A dynamic electro-thermal model for the IGBT ieee industry applications society annual meeting. ,vol. 30, pp. 394- 405 ,(1992) , 10.1109/IAS.1992.244425
R. De Maglie, P. Austin, L. Mussard, J.-L. Sanchez, M. Elghazouani, F. Richardeau, J.-L. Schanen, A trench IGBT distributed model with thermo-sensible parameters european conference on power electronics and applications. ,(2005) , 10.1109/EPE.2005.219649