Theoretical and numerical comparison between DMOS and trench technologies for insulated gate bipolar transistors
作者： F. Udrea , G.A.J. Amaratunga
DOI: 10.1109/16.391221
关键词:
摘要: An accurate and comprehensive comparison between DMOS Trench technologies for Insulated Gate Bipolar Transistors (IGBT) is presented. The study performed using extensive two-dimensional numerical simulations fundamental physical modeling. Various phenomena such as the influence of channel density on forward voltage drop effect mobility degradation on-state characteristics have been object controversial studies. analysis here describes rigorously these accounts new effects length modulation PIN diode carrier dynamics. It concluded that at relatively high current densities (>100 A/cm/sup 2/) an optimally designed IGBT results in significant theoretical advantages over its conventional variant, mainly due to increased packing density, effect, reduced latch-up elimination JFET effect. >
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