Numerical comparison of DMOS, VMOS, and UMOS power transistors
作者： A.A. Tamer , K. Rauch , J.L. Moll
关键词:
摘要: Two-dimensional simulation of breakdown voltage and on-resistance DMOS, VMOS, UMOS vertical power devices is performed. The three are evaluated for breakdown-voltage designs 100, 550, 1000 V.
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sci-hub.se 参考文章(2)
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