摘要: In principle, the upper limit on transistor speed is determined, one hand, by inertia of physical processes taking place in region where charge carriers interact with electric field semiconductor, and, other time it takes to transistor’s output capacitance (which includes load capacitance). This shorter as gain or transconductance higher and magnitudes “ballast” resistances are lower. this chapter we will examine common bipolar transistors (Sec. 1.1) field-effect 1.2) reveal that determine their when operating switches microwave small-signal amplifier mode. From examination fundamental parameters speed. These be used throughout book describe characteristics superhigh-speed transistors. The logic gate presented Sec. 1.3.
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sci-hub.st 参考文章(18)
Norman G. Einspruch, Vlsi Electronics: Microstructure Science ,(1982)
JOHN R. BREWS, Physics of the MOS Transistor Silicon Integrated Circuits. pp. 1- 120 ,(1981) , 10.1016/B978-0-12-002954-9.50006-3
D. A. Fraser, The physics of semiconductor devices Clarendon Press , Oxford University Press. ,(1986)
C.A.T. Salama, A new short channel MOSFET structure (UMOST) Solid-State Electronics. ,vol. 20, pp. 1003- 1009 ,(1977) , 10.1016/0038-1101(77)90211-8
H.P.D. Lanyon, R.A. Tuft, Bandgap narrowing in heavily doped silicon 1978 International Electron Devices Meeting. pp. 316- 319 ,(1978) , 10.1109/IEDM.1978.189417
P.M. Solomon, A comparison of semiconductor devices for high-speed logic Proceedings of the IEEE. ,vol. 70, pp. 489- 509 ,(1982) , 10.1109/PROC.1982.12333
S.I. Long, B.M. Welch, R. Zucca, P.M. Asbeck, C-P. Lee, C.G. Kirkpatrick, F.S. Lee, G.R. Kaelin, R.C. Eden, High speed GaAs integrated circuits Proceedings of the IEEE. ,vol. 70, pp. 35- 45 ,(1982) , 10.1109/PROC.1982.12228
R.C. Eden, Comparison of GaAs device approaches for ultrahigh-speed VLSI Proceedings of the IEEE. ,vol. 70, pp. 5- 12 ,(1982) , 10.1109/PROC.1982.12225
J.S.T. Huang, G.W. Taylor, Modeling of an ion-implanted silicon-gate depletion-mode IGFET IEEE Transactions on Electron Devices. ,vol. 22, pp. 995- 1001 ,(1975) , 10.1109/T-ED.1975.18259
J. Tihanyi, D. Widmann, DIMOS - A novel IC technology with submicron effective channel MOSFETs 1977 International Electron Devices Meeting. pp. 399- 401 ,(1977) , 10.1109/IEDM.1977.189270