Comparison of GaAs device approaches for ultrahigh-speed VLSI
作者： R.C. Eden
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摘要: The superior electronic properties of gallium arsenide and related III-V compound semiconductors, as compared with silicon, have made them great interest for ultrahigh-speed logic applications. Many ingenious device structures been proposed or demonstrated utilizing the advantageous electron dynamics GsAs to achieve ultralow propagation delay and/or power-delay product (dynamic switching energy) circuits. intent this paper is give an overview some these GaAs approaches, including their principal, attractions, expected performance levels, etc. (Much more detailed analyses are presented in other papers issue.) This extended a comparison relative merits approaches vis-a-vis applicability achieving ultra high-speed large-scale integration (LSI) very (VLSI) levels complexity (as opposed simpler SSI/MSI applications).
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