Suppression of parasitic JFET effect in trench IGBTs by using a self-aligned p base process
作者： X Yuan , T Trajkovic , F Udrea , J Thomson , P.R Waind
DOI: 10.1016/S0038-1101(02)00132-6
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摘要: … JFET effect in high voltage Trench insulated gate bipolar transistors (IGBTs) by employing a new self-aligned p base process. The parasitic JFET … the parasitic JFET effect into a small …
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