Optimum carrier distribution of the IGBT
作者： K Sheng , F Udrea , G.A.J Amaratunga
DOI: 10.1016/S0038-1101(00)00103-9
关键词:
摘要: … It is found that, in contrast to a typical IGBT design, the optimum carrier distribution has a significantly higher carrier concentration at the cathode end of the device than that at the anode …
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