Punchthrough type GTO with buffer layer and homogeneous low efficiency anode structure
作者： S. Eicher , F. Bauer , A. Weber , H.R. Zeller , W. Fichtner
DOI: 10.1109/ISPSD.1996.509495
关键词: Wafer 、 Anode 、 New device 、 Thyristor 、 Electrical engineering 、 Optoelectronics 、 Buffer (optical fiber) 、 Homogeneous 、 Layer (electronics) 、 Materials science
摘要: A new type of full scale 4.5 kV/3 kA GTO has been developed, fabricated, and electrically characterized. The device utilizes a punchthrough concept with buffer layer. To avoid the requirement excessive gate currents for turn-on, homogeneous anode layer without shorts. very low efficiency, which allows efficient extraction charge during turn-off. With layer, significantly reduced wafer thickness as compared to conventional devices buffer. This reduces switching well on-state losses. turn-off losses best were one third those GTOs and, at same time, decreased by more than third.
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