Turn-off energy reduction by charge control in a cascode-switched GTO

摘要: Recently, improvements in the performance of high power gate turn-off thyristors (GTOs) have been made by operation at gains G/spl les/1 (Gruning et al, 1996) and G=1 (Oetjen Sittig, 1997). Both result an increased SOA therefore snubber can be reduced or omitted. However, very steep rise current increases device's losses, comparison to conventional GTO (G>1). This paper shows how a cascode-type process controlled reduce switching losses GTO. After discussing influence excess charge on method control cascode switch is described. Finally, experimental results for pre-discharged sequence standard 4.5 kV/3 kA are presented.