Design considerations for a 7 kV/3 kA GTO with transparent anode and buffer layer
作者： S. Eicher , F. Bauer , H.R. Zeller , A. Weber , W. Fichtner
关键词: Materials science 、 Optoelectronics 、 Anode 、 Homogeneous 、 Electrical engineering 、 Voltage 、 Layer (electronics) 、 Buffer (optical fiber) 、 Thyristor 、 Thermal conduction
摘要: Using a novel concept for the anode of GTO devices, authors have developed, manufactured, and characterized full scale 4.5 kV/3 kA thyristors. Utilizing buffer layer transparent anode, these devices extremely low conduction switching losses. In this work, simulation results 7 structures with homogeneous are presented. By applying design criteria given in paper, can be proposed, which on-state losses comparable to those state-of-the-art
sci-hub.se 参考文章(7)
H.R. Zeller, Cosmic ray induced breakdown in high voltage semiconductor devices, microscopic model and phenomenological lifetime prediction international symposium on power semiconductor devices and ic's. pp. 339- 340 ,(1994) , 10.1109/ISPSD.1994.583762
H. Kabza, H.-J. Schulze, Y. Gerstenmaier, P. Voss, J.W.W. Schmid, F. Pfirsch, K. Platzoder, Cosmic radiation as a cause for power device failure and possible countermeasures international symposium on power semiconductor devices and ic's. pp. 9- 12 ,(1994) , 10.1109/ISPSD.1994.583620
S. Eicher, F. Bauer, A. Weber, H.R. Zeller, W. Fichtner, Punchthrough type GTO with buffer layer and homogeneous low efficiency anode structure international symposium on power semiconductor devices and ic s. pp. 261- 264 ,(1996) , 10.1109/ISPSD.1996.509495
H.R. Zeller, Cosmic ray induced failures in high power semiconductor devices Solid-state Electronics. ,vol. 38, pp. 2041- 2046 ,(1995) , 10.1016/0038-1101(95)00082-5
B. Jayant Baliga, Modern power devices ,(1987)
T. Ogura, M. Kitagawa, A. Nakagawa, H. Ohashi, 6000-V gate turn-off thyristors (GTOs) with n-buffer and new anode short structure IEEE Transactions on Electron Devices. ,vol. 38, pp. 1491- 1496 ,(1991) , 10.1109/16.81643
T. Nakagawa, F. Tokunoh, M. Yamamoto, S. Koga, A new high power low loss GTO international symposium on power semiconductor devices and ic's. pp. 84- 88 ,(1995) , 10.1109/ISPSD.1995.515014