Carrier stored trench-gate bipolar transistor (CSTBT)-a novel power device for high voltage application
作者： H. Takahashi , H. Haruguchi , H. Hagino , T. Yamada
DOI: 10.1109/ISPSD.1996.509513
关键词:
摘要: A new device concept, called the Carrier Stored Trench-Gate Bipolar Transistor (CSTBT) is reported for the first time. The CSTBT forms the n layer under p base between trenches, the n …
sci-hub.se 参考文章(1)
F. Udrea, G.A.J. Amaratunga, A unified analytical model for the carrier dynamics in trench insulated gate bipolar transistors (TIGBT) international symposium on power semiconductor devices and ic's. pp. 190- 195 ,(1995) , 10.1109/ISPSD.1995.515033