A unified analytical model for the carrier dynamics in trench insulated gate bipolar transistors (TIGBT)
作者： F. Udrea , G.A.J. Amaratunga
DOI: 10.1109/ISPSD.1995.515033
关键词:
摘要: A physically-based analytical model for the on-state carrier dynamics in Trench Insulated Gate Bipolar Transistors (TIGBT) is proposed. The accounts enhanced modulation drift base due to PIN diode effect. phenomena TIGBT are accurately described using numerical simulations and modeling. effect has a very important role reducing forward voltage with virtually no compromise turn-off performance. It concluded that most promising power structure area of high or/and fast switching devices.
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