An analytical investigation of the effect of varied buffer layer designs on the turn-off speed for 4H-SiC IGBTs
作者： Meng-Chia Lee , Xing Huang , Alex Huang , Edward Van Brunt
DOI: 10.1109/WIPDA.2013.6695559
关键词:
摘要: We propose a criterion to quantify the relationship between buffer layer parameters at given total charge and turn-off speed for 4H-SiC IGBTs. Three phases of voltage ramp are analytically discussed during inductive load by solving each corresponding continuity equation. Extra emphasis will be placed on Phase II - transition phase in initial punch-through.
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