作者: Bo Liu , Xin Nan Lin , Frank X.C. Jiang , Jin He
DOI: 10.4028/WWW.SCIENTIFIC.NET/AMR.677.334
关键词:
摘要: APartial Narrow Mesa (PNW)SJ IGBT structure is proposed in this paper.With a non-connected SJ implemented inthe PNW IGBT,the combines the injection enhancement effectsfrom bothPNW and structure,which improvesthecarrier concentrationnear cathode sideand reducesthe on-state voltage drop.Meanwhile, implementationof theSJ improvesthe blockingcapabilityat an equivalent device thickness reduces turn-off loss. Therefore,the has better Vce Eofftrade-off. These advantages have beendemonstratedby 2-Dnumerical simulation.