The 3rd generation IGBT toward a limitation of IGBT performance
作者： M. Otsuki , S. Momota , A. Nishiura , K. Sakurai
DOI: 10.1109/ISPSD.1993.297101
关键词:
摘要: The performance of the third-generation IGBT (insulated-gate bipolar transistor) is described. It demonstrated that a 600-V/100-A has an on-state voltage drop about 1.7 V and fall-time 150 ns during inductive-load turn-off, which very close to limit predicted by numerical simulation. device overcurrent protection, average short circuit withstand capability 30 mu s was obtained. An almost 40% reduction in switching loss been realized, as compared with conventional modules, for PWM (pulse width modulated) inverter application. >
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