Current sensing IGBT structure with improved accuracy
作者： M. Kudoh , M. Otsuki , S. Obinata , S. Momota , T. Yamazaki
DOI: 10.1109/ISPSD.1995.515020
关键词: Current injection technique 、 Electronic engineering 、 Computer simulation 、 Overcurrent 、 Inrush current 、 Insulated-gate bipolar transistor 、 Current (fluid) 、 Physics 、 Constant current 、 Electrical engineering 、 Current ratio
摘要: A current sensing IGBT structure has been investigated in order to reduce collector-emitter voltage dependence of the ratio main for short-circuit over-current protection. The operation physics during was analyzed by numerical simulation and experimental results improved performance are presented.
sci-hub.se 参考文章(5)
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