A new IGBT with a monolithic over-current protection circuit
作者： Y. Seki , Y. Harada , N. Iwamuro , N. Kumagai
DOI: 10.1109/ISPSD.1994.583634
关键词: Voltage drop 、 Short circuit 、 Electrical engineering 、 Electronic engineering 、 RLC circuit 、 Materials science 、 Safe operating area 、 Resistor 、 Insulated-gate bipolar transistor 、 Voltage 、 Overcurrent
摘要: A new IGBT structure with a monolithic overcurrent sensing and protection circuit has been developed. The feature of this device is novel integration which consists IGBT, lateral n-MOSFET, polycrystalline silicon diode resistor an structure. conventional fabrication process available to only one more photomask. Comparison not short safe operating area but both trade-off characteristics between on-state voltage drop turn-off loss reverse biased investigated. Since exhibiting large without deterioration any other characteristics, can be applied soft switching application like resonant hard snubberless inductive load circuit.
sci-hub.se 参考文章(2)
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T. Yamazaki, Y. Seki, Y. Hoshi, N. Kumagai, The IGBT with monolithic overvoltage protection circuit international symposium on power semiconductor devices and ic's. pp. 41- 45 ,(1993) , 10.1109/ISPSD.1993.297104