The fast turn off advanced IGBT, a new device concept
作者： H.P. Yee , P.O. Lauritzen , R.B. Darling , M. Wakatabe , A. Sugai
DOI: 10.1109/ISPSD.1994.583648
关键词:
摘要: A new lateral Advanced IGBT (A-IGBT) that includes an additional P-MOSFET for faster turn-off is presented. The added removes injected minority carriers in the base of A-IGBT during turn-off, achieving times without increasing on-state voltages. Device simulations indicate has a factor 10 improvement time over standard IGBT.
sci-hub.se 参考文章(6)
S.P. Robb, J.L. Sutor, L.E. Terry, Smartdiscretes, new products for automotive applications Automotive Power Electronics. pp. 109- 113 ,(1989) , 10.1109/APE.1989.97168
M. Otsuki, S. Momota, A. Nishiura, K. Sakurai, The 3rd generation IGBT toward a limitation of IGBT performance international symposium on power semiconductor devices and ic's. pp. 24- 29 ,(1993) , 10.1109/ISPSD.1993.297101
A. Nakagawa, Numerical experiment for 2500 V double gate bipolar-mode MOSFETs (DGIGBT) and analysis for large safe operating area (SOA) power electronics specialists conference. pp. 84- 90 ,(1988) , 10.1109/PESC.1988.18119
Allen R. Hefner, David L. Blackburn, An analytical model for the steady-state and transient characteristics of the power insulated-gate bipolar transistor Solid-State Electronics. ,vol. 31, pp. 1513- 1532 ,(1988) , 10.1016/0038-1101(88)90025-1
B.J. Baliga, M.S. Adler, P.V. Gray, R.P. Love, N. Zommer, The insulated gate rectifier (IGR): A new power switching device 1982 International Electron Devices Meeting. pp. 264- 267 ,(1982) , 10.1109/IEDM.1982.190269
S. Momota, M. Otsuki, K. Sakurai, Double gate MOS device having IGBT and MCT performances international symposium on power semiconductor devices and ic's. pp. 28- 33 ,(1992) , 10.1109/ISPSD.1992.991232