A novel driving technology for a passive gate on a Lateral-IGBT
作者： Tomohide Terashima
DOI: 10.1109/ISPSD.2009.5157997
关键词:
摘要: This paper presents a novel technology for automatic driving of the passive PMOS to improve Lateral-IGBT switching performance. Though former technology, which we had introduced [4, 5], has very simple circuitry, it still needs some additional process or structural change. The eliminates these remained problems without decrease in device Simulation results indicate advantage total performance compared with technology. Besides, experimental prototype IPD have indicated improved distinctly.
sci-hub.se 参考文章(6)
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