Fast speed lateral IGBT with Buried N-region Controlled Anode on SOI substrate
作者： Wensuo Chen , Gang Xie , Bo Zhang , Zhaoji Li , Mei Zhao
DOI: 10.1109/EDSSC.2009.5394238
关键词:
摘要: A new Lateral Insulated-Gate Bipolar Transistor (LIGBT) structure on SOI substrate, called Buried N-region Controlled Anode LIGBT (BNCA-LIGBT), is proposed and discussed. The BNCA-LIGBT a modified of the (NCA-LIGBT) which we have presented earlier. Numerical simulation results BNCALIGBT operation show that turn-off speed faster on-state voltage drop lower than NCA-LIGBT. Furthermore, also has advantages NCA-LIGBT such as efficient area using, easy driving, effectively NDR suppression in forward I–V characteristics high breakdown voltage. SOIBNCA-LIGBT can be fabricated by conventional power IC's process steps.
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