Novel lateral IGBT with n-region controlled anode on SOI substrate
作者： Chen Wensuo , Xie Gang , Zhang Bo , Li Zehong , Li Zhaoji
DOI: 10.1088/1674-4926/30/11/114005
关键词:
摘要: A new lateral insulated-gate bipolar transistor (LIGBT) structure on SOI substrate, called an n-region controlled anode LIGBT (NCA-LIGBT), is proposed and discussed. The concept results in fast switch speeds, efficient area usage effective suppression NDR forward I–V characteristics. Simulation of the key parameters (n-region doping concentration, length, thickness p-base concentration) show that NCA-LIGBT has a good tradeoff between turn-off time on-state voltage drop. novel device for power ICs such as PDP scan driver ICs.
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