Fast switching lateral insulated gate transistor
作者： P.A. Gough , M.R. Simpson , V. Rumennik
关键词: Electrical engineering 、 Power semiconductor device 、 Switching time 、 Transistor 、 Steady state 、 LDMOS 、 Nanosecond 、 Threshold voltage 、 Anode 、 Materials science
摘要: The switching speed of the Lateral Insulated Gate Transistor (LIGT) is slow compared to that similar LDMOS power devices. LIGT described in this paper, however, designed have both fast, and high current conduction. improvement achieved by using a modified structure, where an additional n+region added p+injector. turn-off time less than 450 nanoseconds, while turn-on under 100 nanoseconds. Computer simulation used understand role shorted anode improving LIGT. A comparison with fabricated devices shown be good qualitative agreement.
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