Metal oxide semiconductor field-effect transistor having a gate oxide layer with portions of different thicknesses and associated methods
作者： Giuseppe Croce , Alessandro Moscatelli
DOI:
关键词: Wafer 、 Metal gate 、 Oxide thin-film transistor 、 Field-effect transistor 、 Gate dielectric 、 Transistor 、 Gate oxide 、 Electronic engineering 、 Materials science 、 Optoelectronics 、 Equivalent oxide thickness
摘要: A metal oxide semiconductor transistor integrated in a wafer of material includes gate structure located on surface the and layer. The layer first portion having thickness second differing from thickness.
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