Conductivity modulation enhanced lateral IGBT with SiO2 shielded layer anode by SIMOX technology on SOI substrate
作者： Chen Wensuo , Zhang Bo , Li Zhaoji , Fang Jian , Guan Xu
DOI: 10.1088/1674-4926/31/6/064004
关键词:
摘要: A new lateral insulated-gate bipolar transistor (LIGBT) with a SiO2 shielded layer anode on SOI substrate is proposed and discussed. Compared to the conventional LIGBT, device offers an enhanced conductivity modulation effect due structure which can be formed by SIMOX technology. Simulation results show that, for during conducting state, electron–hole plasma concentrations in n-drift region are several times larger than those of LIGBT; current up 37% that one. The does not sacrifice other characteristics device, such as breakdown switching, but compatible optimized technologies.
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