Analysis and design of the dual-gate inversion layer emitter transistor
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摘要: The dual-gate inversion layer emitter transistor (DGILET) is a device in which the injection of minority carriers takes place from an formed under MOS gate. Therefore, can be switched between and bipolar modes using gate giving means to achieve superior combination low conduction losses switching losses. structure operation both unipolar are described detail. Devices have been fabricated on bulk silicon wafers junction isolation experimental results confirm expected performance. In particular, predictions that if injector properly designed, voltage snapback occurs during transition completely suppressed. This achieved with compact contrast extended structures required anode-shorted lateral insulated (LIGBTs). An equivalent circuit for DGILET presented control carrier also analyzed. Experimental show switch at speeds approaching those characteristic MOSFETs operating current densities comparable LIGBTs. offers lower overall than LIGBT frequencies above about 10 kHz.
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