Ultralow Turn-OFF Loss SOI LIGBT With p-Buried Layer During Inductive Load Switching
作者： Yitao He , Ming Qiao , Xin Zhou , Zhaoji Li , Bo Zhang
关键词: Charge (physics) 、 Anode voltage 、 Physics 、 Condensed matter physics 、 Silicon on insulator 、 Layer (electronics) 、 Electrical engineering 、 Turn off 、 Inductive load 、 Bipolar junction transistor 、 Capacitance
摘要: … The VA rise phase can be divided into three regions with different slopes. 1) Region ① (T0 … 20 μH, and the gate resistance is set to be zero considering the fast gate voltage transitions. …
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