Ultralow turnoff loss dual-gate SOI LIGBT with trench gate barrier and carrier stored layer*
作者： Yi-Tao He , Ming Qiao , Bo Zhang
DOI: 10.1088/1674-1056/25/12/127304
关键词: Layer (electronics) 、 Silicon on insulator 、 Dual gate 、 Materials science 、 Trench gate 、 Optoelectronics
摘要:
harvard.edu
sci-hub.se 参考文章(13)
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