200-V Lateral Superjunction LIGBT on Partial SOI
作者： Elizabeth Ching Tee Kho , Alexander Dietrich Hoelke , Steven John Pilkington , Deb Kumar Pal , Wan Azlan Wan Zainal Abidin
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摘要: This letter presents a novel lateral superjunction insulated-gate bipolar transistor (LIGBT) in partial silicon-on-insulator (SOI) technology 0.18-μm partial-SOI (PSOI) high-voltage (HV) process. For an n-type LIGBT, the p-layer drift region not only helps achieving uniform electric field distribution but also contributes to on-state current. The LIGBT successfully achieves breakdown voltage (BV) of 210 V with Rdson 765 mΩ·mm2. It exhibits half value specific resistance and three times higher saturation current (Idsat) for same BV, compared comparable laterally diffused metal-oxide-semiconductor fabricated technology. performs well temperature dc operation 38.8% increase at 175 °C, room without any degradation latch-up performance. To realize this device, it requires one additional mask layer into X-FAB PSOI HV
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