A Novel Double-RESURF SOI Lateral TIGBT With Self-Biased nMOS for Improved ${V}_{\text{CE(sat)}}$ – ${E}_{\text{off}}$ Tradeoff Relationship
作者： Huan Hu , Haimeng Huang , Xing Bi Chen
关键词: Silicon on insulator 、 NMOS logic 、 Physics 、 Condensed matter physics 、 Surface field 、 Saturation current 、 Bipolar junction transistor 、 Common emitter 、 Conductivity modulation 、 Transistor
摘要: A novel double-reduced surface field (RESURF) silicon-on-insulator (SOI) lateral trench insulated-gate bipolar transistor (LTIGBT) with self-biased nMOS is proposed and investigated by simulation. During the turn-on transient, turned-off, p-top region floating, therefore conductivity modulation in drift on emitter side can be enhanced to achieve a low on-state voltage ( ${V}_{\textsf {CE(sat)}}$ ). turn-off turned on, connected emitter, which effectively reduces its loss ${E}_{ \mathrm{\scriptscriptstyle OFF}}$ As result, LTIGBT realizes superior – $E_{ tradeoff relationship than both conventional SOI trench-gate (LIGBT) (LTIGBT-A) double-RESURF LIGBT (LTIGBT-B). Simulation results reveal that, identical of 0.25 mJ/cm2, 1.08 V, 11.4% 32.5% lower those LTIGBT-A LTIGBT-B, respectively; 1.1 one 0.19 mJ/cm $^{\textsf {2}}$ , 70% 89% other two, respectively. Furthermore, device exhibits saturation current.
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