The MOS inversion layer as a minority carrier injector
作者： F. Udrea , G.A.J. Amaratunga , J. Humphrey , J. Clark , A.G.R. Evans
DOI: 10.1109/55.536281
关键词:
摘要: In this paper we report the first experimental demonstration of concept MOS inversion layer injection (ILI). The new physical is based on use a as minority carrier injector part dynamic junction. such junction entirely controlled by gate. Moreover, when gate potential reduced under threshold voltage, collapses ensuring very efficient turn-off mechanism. Based propose two novel lateral three-terminal structures termed diode (ILD) and bipolar transistor (ILBT). can be applied in power devices where effective control active junctions important.
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