The double gate lateral inversion layer emitter transistor-a novel power device concept with a dynamic emitter
作者： F. Udrea , A.J. Amaratunga
DOI: 10.1109/BIPOL.1996.554143
关键词:
摘要: A novel device concept termed the Double Gate Lateral Inversion Layer Emitter Transistor (DG LILET) is proposed and demonstrated experimentally. The based on a new physical injection mechanism. This use of MOS inversion layer as minority carrier injector. DG ILET can operate in three distinctive modes, MOSFET, transistor thyristor function potentials applied to cathode anode gates. offers high switching frequency, large safe operating area flexible on-state operation therefore promising candidate for voltage, fast speed devices integrated circuits.
sci-hub.se 参考文章(4)
M.N. Darwish, A new lateral MOS-controlled thyristor IEEE Electron Device Letters. ,vol. 11, pp. 256- 257 ,(1990) , 10.1109/55.55272
F. Udrea, G.A.J. Amaratunga, Theoretical and numerical comparison between DMOS and trench technologies for insulated gate bipolar transistors IEEE Transactions on Electron Devices. ,vol. 42, pp. 1356- 1366 ,(1995) , 10.1109/16.391221
J.D. Plummer, J.D. Meindl, A monolithic 200-V CMOS analog switch IEEE Journal of Solid-State Circuits. ,vol. 11, pp. 809- 817 ,(1976) , 10.1109/JSSC.1976.1050822
F. Udrea, G.A.J. Amaratunga, J. Humphrey, J. Clark, A.G.R. Evans, The MOS inversion layer as a minority carrier injector IEEE Electron Device Letters. ,vol. 17, pp. 425- 427 ,(1996) , 10.1109/55.536281