A new lateral MOS-controlled thyristor
作者： M.N. Darwish
DOI: 10.1109/55.55272
关键词: Electrical engineering 、 Static induction transistor 、 Transistor 、 Integrated gate-commutated thyristor 、 MOS-controlled thyristor 、 Gate turn-off thyristor 、 Silicon 、 Thyristor 、 Engineering 、 Breakdown voltage
摘要: A lateral MOS-controlled thyristor (LMCT) structure that uses an MOS gate to turn it both on and off is presented. The device offers improved maximum turn-off current capability forward voltage drop. former achieved by using a DMOS transistor parasitic vertical p-n-p transistor, while the latter eliminating in conventional structure. utilizes resurf technique achieve high area efficiency, breakdown voltage, reliability. Devices have more than 250-V blocking were fabricated dielectrically isolated silicon tubs standard bipolar-CMOS-DMOS process. >
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