A trench-gate LIGBT structure and two LMCT structures in SOI substrates
作者： D.R. Disney , H.B. Pein , J.D. Plummer
DOI: 10.1109/ISPSD.1994.583808
关键词:
摘要: This paper describes a novel SOI trench-gate Lateral Insulated-Gate Bipolar Transistor (LIGBT) structure which exhibits 2.5 times higher latching current densities than an equivalent, conventional LIGBT. improvement is achieved by allowing most of the hole to reach cathode contact without flowing under N+ source region. In addition, two MOS-Controlled Thyristor (LMCT) structures in Silicon-on-Insulator (SOI) substrates are presented. These devices achieve on-state performance far superior that equivalent LIGBT devices, and switching speeds nearly The LMCT configurations compared terms their Maximum Controllable Current (MCC), exceeds 100 A/cm/sup 2/ for some configurations.
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