Method of marking a lateral mos controlled thyristor
作者： Mohamed N. Darwish
DOI:
关键词: Thyristor 、 Transistor 、 Electrical resistivity and conductivity 、 Electrical engineering 、 Static induction thyristor 、 Drop (telecommunication) 、 Gate turn-off thyristor 、 Integrated gate-commutated thyristor 、 MOS-controlled thyristor 、 Materials science
摘要: A lateral MOS-controlled thyristor (MCT) structure using a single MOS gate for both turn-on and turn-off. By eliminating parasitic PNP transistor, through the addition of high resistivity region surrounding one output terminal, adding DMOS transistor to conventional structure, maximum turn-off current limit is increased with lower forward voltage drop than that available in prior art MCTs.
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