MOS GTO—A turn off thyristor with MOS-controlled emitter shorts

摘要: The use of integrated MOS-controlled emitter shorts is a new method to turn off high power thyristors without any additional base contacting system. Simulations the MOS GTO process show that on state currents in order 1000 A/cm2can be turned off. Samples 3.5 mm × GTOs both with p-channel and n-channel MOS-structures have been prepared. p-base doping, lifetime reduction by Pt-diffusion, width element ard R transistors were optimized respect characteristics. With devices at anode voltage less than about 200 V current A/cm2could indeed