The inversion layer emitter thyristor - a novel power device concept
作者： F. Udrea , G.A.J. Amaratunga
DOI: 10.1109/ISPSD.1994.583751
关键词:
摘要: A novel MOS-controlled power device termed the Inversion Layer Emitter Thyristor (ILET) is proposed. The principle of operation based on a new physical concept that expresses transition an inversion layer from majority carrier channel into minority injector. operates in combined thyristor-IGBT mode having thyristor emitter formed by layer. In on-state effective MOS structure sub-micrometre order, and does not affect off-state voltage blocking capability device.
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