Dual Gate Lateral Inversion Layer Emitter Transistor for power and high voltage integrated circuits
作者： U.N.K. Udugampola , R.A. McMahon , F. Udrea , K. Sheng , G.A.J. Amaratunga
关键词:
摘要: The Dual Gate Lateral Inversion Layer Emitter Transistor (DGLILET) is a versatile device with controlled carrier injection and ultra fast switching capability. DGLILET has an improved trade off between the on-state turn losses enabling performance of High Voltage Integrated Circuits (HVICs) to be enhanced by reducing overall at frequencies over approximately 10 kHz. This paper focuses on use in these applications demonstrates experimental results fabricated devices confirming performance.
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iee.org.uk参考文章(4)
K. Sheng, U.N.K. Udugampola, G.F.W. Khoo, F. Udrea, G.A.J. Amaratunga, R.A. McMahon, E.M.S. Narayanan, M.M. De Souza, S. Hardikar, Dual gate lateral inversion layer emitter transistor international symposium on power semiconductor devices and ic's. pp. 37- 40 ,(2002) , 10.1109/ISPSD.2002.1016165
F. Udrea, U.N.K. Udugampola, K. Sheng, R.A. McMahon, G.A.J. Amaratunga, E.M.S. Narayanan, M.M. De Souza, S. Hardikar, Experimental demonstration of an ultra-fast double gate inversion layer emitter transistor (DG-ILET) IEEE Electron Device Letters. ,vol. 23, pp. 725- 727 ,(2002) , 10.1109/LED.2002.805757
H. Arakawa, Y. Sugawara, N. Sakurai, M. Nemoto, A three-phase inverter IC for AC220 V with a drastically small chip size and highly intelligent functions international symposium on power semiconductor devices and ic's. pp. 310- 315 ,(1993) , 10.1109/ISPSD.1993.297144
F. Udrea, G.A.J. Amaratunga, J. Humphrey, J. Clark, A.G.R. Evans, The MOS inversion layer as a minority carrier injector IEEE Electron Device Letters. ,vol. 17, pp. 425- 427 ,(1996) , 10.1109/55.536281