Inversion layer injection devices from concept to applications in HVICs
作者： F. Udrea , G. Amaratunga , N. Udugampola
DOI: 10.1109/SMICND.2004.1402792
关键词:
摘要: This paper reviews the concept of inversion layer injection from band diagrams to full fabrication and application in area high voltage integrated circuits. Inversion devices range vertical trench gate structures where is used as a thyristor emitter, lateral power circuits p-type injector anode junction LIGBT-like structures. When applied delivers smooth I-V characteristic without trading off on-state against transient losses thus achieving very frequency capability (in excess 100 KHz for 500 V devices). Therefore such are particularly attractive emerging current density with minimum overall essential.
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