A Complete Isothermal Model for the Lateral Insulated Gate Bipolar Transistor on SOI technology
作者： Vasantha Pathirana , Sahan Gamage , Florin Udrea , Ettore Napoli
DOI: 10.1109/TENCON.2005.301150
关键词:
摘要: While there are several analytical models dedicated to the vertical IGBT is virtually no reliable model for Lateral (LIGBT). LIGBTs increasingly popular in smart power and integrated circuits, especially those applications where high voltage current capabilities required. Silicon on insulator (SOI) could be future technology devices circuits due its much improved device isolation. In this work we report first time a complete SOI LIGBT based semiconductor physics with very few fitting parameters. The assessed against finite element simulations experimental results.
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