Accurate Physical Model for the Lateral IGBT in Silicon On Insulator Technology
作者： Pathirana , F Udrea , E Napoli
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摘要: Many vertical IGBT models are currently available. They have also been implemented in commercial simulators and describe device behavior both steady-state transient. However, no reliable proposed for the Lateral that is widely used field of smart power integrated circuits. In this paper a complete physical model fabricated Silicon On Insulator technology developed. The Pspice circuit simulator. Model results compared against finite element simulation. A comparison with most common shows not able to correctly predict behavior. LIGBT accounts static transient isothermal conditions. simulator two-dimensional numerical simulations experimental results. section II main differences between lateral highlighted. III IV transients equations presented. V sub-circuit shown. Section VI presents 2D simulations. MAIN DIFFERENCES BETWEEN AND VERTICAL schematic SOI considered our analysis shown Fig. 1. It 600V punch-through device. buffer layer is, however, lightly doped so during on-state charge concentration higher than its doping behaves like non state carrier
参考文章(15)
R. Kraus, P. Turkes, J. Sigg, Physics-based models of power semiconductor devices for the circuit simulator SPICE power electronics specialists conference. ,vol. 2, pp. 1726- 1731 ,(1998) , 10.1109/PESC.1998.703414
Y. Kawaguchi, Y. Terazaki, A. Nakagawa, Subcircuit SPICE modeling of a lateral IGBT for high voltage power IC design international symposium on power semiconductor devices and ic's. pp. 346- 349 ,(1995) , 10.1109/ISPSD.1995.515062
Allen R. Hefner, David L. Blackburn, An analytical model for the steady-state and transient characteristics of the power insulated-gate bipolar transistor Solid-State Electronics. ,vol. 31, pp. 1513- 1532 ,(1988) , 10.1016/0038-1101(88)90025-1
D.M Garner, F Udrea, H.T Lim, W.I Milne, An analytic model for turn off in the silicon-on-insulator LIGBT Solid-State Electronics. ,vol. 43, pp. 1855- 1868 ,(1999) , 10.1016/S0038-1101(99)00150-1
F Udrea, Q Amaratunga, GAJ, Huang, The effect of the hole current on the channel inversion in trench insulated gate bipolar transistors (TIGBT) Solid-state Electronics. ,vol. 37, pp. 507- 514 ,(1994) , 10.1016/0038-1101(94)90018-3
J. Sigg, P. Turkes, R. Kraus, Parameter extraction methodology and validation for an electro-thermal physics-based NPT IGBT model ieee industry applications society annual meeting. ,vol. 2, pp. 1166- 1173 ,(1997) , 10.1109/IAS.1997.629008
A.R. Hefner, An improved understanding for the transient operation of the power insulated gate bipolar transistor (IGBT) IEEE Transactions on Power Electronics. ,vol. 5, pp. 459- 468 ,(1990) , 10.1109/63.60690
A.R. Hefner, D.M. Diebolt, An experimentally verified IGBT model implemented in the Saber circuit simulator power electronics specialists conference. ,vol. 9, pp. 532- 542 ,(1991) , 10.1109/63.321038
F. Udrea, V.I. Milne, H.T. Lim, A. Popescu, K. Sheng, D. Garner, SOI power device Electronics & Communication Engineering Journal. ,vol. 12, pp. 27- 40 ,(2004) , 10.1049/ECEJ:20000104
A. Ramamurthy, S. Sawant, B.J. Baliga, Modeling the [dV/dt] of the IGBT during inductive turn off IEEE Transactions on Power Electronics. ,vol. 14, pp. 601- 606 ,(1999) , 10.1109/63.774195