Inversion layer emitter devices for HV ICs
作者： F. Udrea , A.J. Amaratunga
DOI: 10.1109/ISPSD.1997.601501
关键词:
摘要: Novel device structures termed Lateral Inversion Layer Emitter Transistors (LILETs) for HVICs are proposed and demonstrated numerically experimentally. These based on the use of inversion layer as a minority carrier injector. Thus, transistor or thyristor emitter is formed by surface opposed to classical concept permanent diffused emitter.
sci-hub.se 参考文章(2)
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