Mobility study on RIE etched silicon surfaces using SF/sub 6//O/sub 2/ gas etchants
作者： T. Syau , B.J. Baliga
DOI: 10.1109/16.239740
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摘要: A methodology for the measurement of inversion layer mobility on trench gate structures, which allows independent sidewall and bottom surface mobilities, is described. Using this method, has been experimentally studied trenches formed using SF/sub 6//O/sub 2/ method diffused base regions power UMOSFETs. The effect several post RIE treatments reported. measured mobilities have found to be comparable those previously reported other etchants. These results are interest design devices (UMOS) technology. >
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