The effects of channel boron-doping on the performance and hot electron reliability of N-channel trench UMOSFETs

摘要: Abstract We report on the effects of channel doping performance and hot electron stress (HES) reliability U-shaped trench gate metal-oxide–silicon field-effect transistors (UMOSFETs). The boron-doped n-channel UMOSFETs are examined using transistor parameters charge pumping current measurements. It is shown that increasing boron degrades via decreasing effective mobility in drift resistance drain region device. does not increase interface trap density, which a major cause for reduction MOSFETs: instead, ionized impurity scattering as well electric field transverse to device channel, both enhanced by doping, argued primarily observed degradation mobility. response HES be dependent level discussed terms energy its influence doping.