Design for hot-carrier reliability of HV UMOS
作者： Chirag Aryadeep , Gene Sheu , Sivaji Selvendran , Suman Jaiswal , S. Krishna Sai
DOI: 10.1109/ISNE.2017.7968721
关键词:
摘要: An innovative and improved UMOS device structure, with gate oxide 900 to 1500A, breakdown voltage 40 100V, robust hot carrier injection (HCI) stress is proposed. We demonstrate report the effect of p-type n-type doping in poly-gate region can improve HCI performance significantly. The UMOSFETs HCI, response been studied.
sci-hub.se 参考文章(3)
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