High voltage power MOSFETs with a trench-gate structure
作者： H.-R. Chang , F.W. Holroyd
DOI: 10.1016/0038-1101(90)90204-R
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摘要: Abstract A two-dimensional numerical analysis has been performed to evaluate the performance of high voltage power MOSFETs with a trench gate structure (UMOSFETs). Such UMOSFETs, utilizing closely-space vertical structure, allow near-ideal doping concentration in drift region, thus resulting very low on-resistance. An optimal design UMOSFETs for blocking 500 V is shown be 12 μm unit cell lowest specific on-resistance 49.7 mΩ-cm 2 , which lower than that state-of-the art DMOSFET by factor 1.75. Designed experimental devices have obtained 54 . This first time were analyzed theoretically and consistently demonstrated experimentally.
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