A novel power MOSFET using drain trench technology
作者： E.S. Vera , N. Yamashita , T. Yachi
DOI: 10.1109/ISPSD.1992.991290
关键词:
摘要: A novel power MOSFET using a deep drain trench is proposed and studied. It shown that such device can achieve low on-resistance below 1.0 mncrn2 with higher voltage breakdown than the conventional lateral MOSFET, while keeping reverse transfer capacitance. Numerical simulations are compared experimental results from first reported Drain Trench Power MOSFETs.
sci-hub.se 参考文章(9)
D.E. Ward, R.W. Dutton, A charge-oriented model for MOS transistor capacitances IEEE Journal of Solid-state Circuits. ,vol. 13, pp. 703- 708 ,(1978) , 10.1109/JSSC.1978.1051123
D. Ueda, H. Takagi, G. Kano, An ultra-low on-resistance power MOSFET fabricated by using a fully self-aligned process IEEE Transactions on Electron Devices. ,vol. 34, pp. 926- 930 ,(1987) , 10.1109/T-ED.1987.23017
S. M. Sze, G. Gibbons, AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADEDp‐nJUNCTIONS IN Ge, Si, GaAs, AND GaP Applied Physics Letters. ,vol. 8, pp. 111- 113 ,(1966) , 10.1063/1.1754511
S. Mukherjee, M. Kim, L. Tsou, M. Simpson, TDMOS-an ultra-low on-resistance power transistor IEEE Transactions on Electron Devices. ,vol. 35, pp. 2459- ,(1988) , 10.1109/16.8905
H.-R. Chang, F.W. Holroyd, High voltage power MOSFETs with a trench-gate structure Solid-State Electronics. ,vol. 33, pp. 381- 386 ,(1990) , 10.1016/0038-1101(90)90204-R
D. Ueda, H. Takagi, G. Kano, A new vertical power MOSFET structure with extremely reduced on-resistance IEEE Transactions on Electron Devices. ,vol. 32, pp. 2- 6 ,(1985) , 10.1109/T-ED.1985.21900
K. Shenai, Gate-resistance-limited switching frequencies of power MOSFETs IEEE Electron Device Letters. ,vol. 11, pp. 544- 546 ,(1990) , 10.1109/55.63027
H. Yilmaz, I. Hshieh, M. Chang, J. Van der Linde, 2.5 million cell/inch/sup 2/, low-voltage DMOS FET technology applied power electronics conference. pp. 513- 518 ,(1991) , 10.1109/APEC.1991.146225
J. E. Meyer, MOS models and circuit simulations RCA Review. ,vol. 32, pp. 42- 63 ,(1971)