Insulated gate bipolar transistor with trench gate structure of accumulation channel
作者： Qian Mengliang , Li Zehong , Zhang Bo , Li Zhaoji , None
DOI: 10.1088/1674-4926/31/3/034002
关键词:
摘要: An accumulation channel trench gate insulated bipolar transistor (ACT-IGBT) is proposed. The simulation results show that for a blocking capability of 1200 V, the on-state voltage drops ACT-IGBT are 1.5 and 2 V at temperature 300 400 K, respectively, collector current density 100 A/cm2. In contrast, conventional IGBT (CT-IGBT) 1.7 2.4 respectively. Compared to CT-IGBT, has lower drop larger forward bias safe operating area. Meanwhile, characteristics turn-off performance also analyzed.
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