Optimum design of 1.4 kV non-punch-through trench IGBTs: the next generation of high-power switching devices
作者： T. Trajkovic , F. Udrea , P.R. Waind , J. Thomson , G.A.J. Amaratunga
关键词:
摘要: The trench insulated gate bipolar transistor (IGBT) is widely regarded as a worthy replacement of DMOS IGBTs and GTO thyristors in wide range applications, from motor control (1.4 kV) to HVDC (6.5 kV). An optimum design 1.4 kV NPT using new fully integrated optimisation system comprised process device simulators an RSM optimiser described. use this TCAD has contributed largely realising devices with characteristics far superior the previous generation IGBTs. Full experimental results on are reported, which excellent agreement predictions.
iee.org.uk参考文章(3)
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